Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 58: Poster IIb
HL 58.47: Poster
Dienstag, 8. März 2005, 16:30–19:00, Poster TU F
Local partial density of states in CuInS2 upper valence band determined by x-ray emission spectroscopy-evidence for In 5p contribution — •L. Zhang1, I. Konovalov2, D. Wett2, M. Nagel1, D. Schulze2, R. Szargan2, and T. Chassé1 — 1Institut für Physikalische und Theoretische Chemie, Universität Tübingen, Auf der Morgenstelle 8, 72076 Tübingen, Germany — 2Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstrasse 2, 04103 Leipzig, Germany
The Cu L2,3, In M4,5 and S L1 soft x-ray emission spectra of single crystalline CuInS2 were measured using synchrotron radiation as excitation source at ROSA endstation of U41-PGM beamline in BESSY. These spectra reflect the local partial density of states (LPDOS) of Cu 3d, In 5p and S 3p valence states, and they correspond to the features in the total density of states of the upper valence band represented in the valence band photoelectron spectrum. A density functional calculation of the LPDOS confirms two components occurring in both S 3p and In 5p partial density of states. From the similarity of the positions and the intensity ratios of these two components, an admixture of In 5p states to the S 3p states in the upper valence band was suggested.