Berlin 2005 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 58: Poster IIb

HL 58.50: Poster

Tuesday, March 8, 2005, 16:30–19:00, Poster TU F

Growth and Characterization of 3C-SiC thin films on Si substrates — •Rakesh Sohal, Karsten Henkel, Klaus Müller, and Dieter Schmeißer — Angewandte Physik Sensorik, BTU Cottbus

This work reports on the growth and characterization of cubic silicon carbide thin films. A cold wall low pressure chemical vapour deposition (LPCVD) system has been used to grow the cubic silicon carbide. The two step method, carbonization and subsequent growth, has been used to grow good quality 3C-SiC thin films. The composition and structure of deposited thin films have been analysed by Fourier Transform Infrared Spectroscopy (FTIR), XPS and X-Ray Diffractometry (XRD). The structural quality of the films has been optimized as a function of substrate temperature during carbonization and growth. X-rays diffraction measurements shows that the grown layers are highly oriented crystalline cubic silicon carbide.