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HL: Halbleiterphysik

HL 58: Poster IIb

HL 58.51: Poster

Dienstag, 8. März 2005, 16:30–19:00, Poster TU F

Oxide-free transfer of silicon layers in UHV — •Alin Mihai Fecioru, Stephan Senz, and Ulrich Michael Gösele — Max-Planck-Institut für Mikrostrukturphysik, 06120 Halle

We combine ultrahigh vacuum (UHV) wafer bonding with hydrogen implantation in order to transfer single crystal silicon layers on (100) and (111) silicon substrates. The smart-cut procedure used for SOI fabrication requires SiO₂ to SiO₂ bonding followed by a high temperature annealing step. Unlike the smart-cut approach, we were able to achieve direct transfer without the involvement of any oxide layers by means of UHV bonding. Hydrogen desorption was done in-situ, by 248 nm excimer laser pulses with energy densities around 300 mJ/cm². TEM investigations were performed in order to confirm that our interfaces are smooth and oxide-free. The electrical properties were characterized by temperature-dependent current-voltage (I-V) measurements correlated with deep level transient spectroscopy (DLTS) measurements, showing the presence of interface and bulk electrically active defects which alter the device performance to some extent. A high temperature annealing step following the splitting procedure improves both the interface properties and the smoothness of the transferred layer.