Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 58: Poster IIb

HL 58.52: Poster

Tuesday, March 8, 2005, 16:30–19:00, Poster TU F

Preparation and Characterization of FeS films — •Ganhua Fu¹, Angelika Polity¹, Wilhelm Kriegseis¹, Dietmar Hasselkamp¹, Bruno K. Meyer¹, Boris Mogwitz², and Jürgen Janek² — ¹I.Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen — ²Physikalisch-Chemisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 58, D-35392, Giessen

Bulk FeS exhibits a metal-semiconductor transition at 420 K. Below 420 K, it is a semiconductor with troilite structure, while it transforms into a poor metal with NiAs-type structure above 420 K, accompanied by a change of two orders of magnitude in electrical conductivity. In this work, FeS films on float glass were prepared by RF reactive sputtering. The structure and morphology of the layers were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. Rutherford back-scattering spectroscopy (RBS) and secondary ion mass spectroscopy (SIMS) were used to determine the compositon of the films. In addition, the effects of the growth parameters, such as power and substrate temperature, on the structure of FeS films were investigated. It’s found that the films show substrate temperature dependent preferred orientation, which varies from (112) plane to (110) plane with the decline of substrate temperature from 773 K down to 473 K.