Berlin 2005 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 58: Poster IIb

HL 58.59: Poster

Dienstag, 8. März 2005, 16:30–19:00, Poster TU F

Investigation of lateral Stark effect in InAs-quantum dots — •Victorina Stavarache¹, Dirk Reuter¹, Andreas D. Wieck¹, Matthias Schwab², Ruth Oulton², and Manfred Bayer² — ¹Angewandte Festkörperphysik, Ruhr- Universität Bochum, Univesitätsstr.150, 44780 Bochum — ²Experimentelle Physik II, Universität Dortmund, Otto-Hahn Strasse 4, 44221 Dortmund

We have investigated the effect of an in-plane (lateral) electric field on self-assembled InAs-quantum dots (QDs) by photoluminescence (PL) and time-resolved spectroscopy measurements. For this, we have fabricated in-plane p-i-n diode structures by implanting Si²⁺ ions (n-type region) and Be⁺ ions (p-type region). The width of the intrinsic region was 2−3 µ m which results in an electric field higher than ∼ 10⁵ Vm⁻¹.

Time resolved PL spectroscopy has been performed on a sample with a relatively high QD density (10¹⁰cm⁻²). The PL intensity decreases with increasing reverse bias as the radiative lifetime increases with increasing electrical field. To observe the change in the emission wavelength as function of the applied electric field (lateral Stark-effect), we have also fabricated devices with low QD density (10⁸−10⁹ cm⁻²). This may also lead to perform single dots spectroscopy. The results will be discussed.