Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 58: Poster IIb

HL 58.62: Poster

Tuesday, March 8, 2005, 16:30–19:00, Poster TU F

Growth Direction of Epitaxially Grown Silicon Nanowires — •Volker Schmidt, Stephan Senz, and Ulrich Gösele — Max-Planck-Institut für Mikrostrukturphysik, Halle, Germany

We found that silicon nanowires grown epitaxially on Si (100) via the vapor-liquid-solid growth mechanism change their growth direction from <111> to <110> at a crossover diameter of approximately 20 nm. A model is proposed for the explanation of this phenomenon. We suggest that the interplay of the liquid-solid interface energy with the silicon surface energy is responsible for the change of the growth direction. For large diameters the direction with the lowest interface energy is dominant, while for small diameters the surface energy of the silicon nanowire determines the preferential growth direction. In addition, results concerning the growth of silicon nanowires with other catalyst materials than gold will be presented.