Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 58: Poster IIb

HL 58.69: Poster

Tuesday, March 8, 2005, 16:30–19:00, Poster TU F

CoSi₂ nanowires synthesized by FIB — •L. Bischoff, B. Schmidt, and C. Akhmadaliev — Research Center Rossendorf, Dresden

Nanowires and chains of nanoparticles are of emerging interest in nano-electronics, nano-optics and plasmonics as well as for their monolithic integration into microelectronic devices. CoSi₂ is a promising material due to its CMOS-compatibility microelectronics technology. Two fabrication methods of CoSi₂ -nanowires by using ion beam synthesis (IBS) with Focused Ion Beams (FIB) technique are presented. In a first approach, an oxide layer, structured by sputtering with a focused Ga⁺ ion beam, have been used as an implantation mask for large area homogeneous Co⁺ implantation. Alternatively, a mass separated FIB of cobalt ions, emitted from a Co₃₆Nd₆₄ alloy liquid metal ion source, is applied for a direct writing IBS process. Implantation into Si with doubly charged Co⁺ ions emitted from the Co source allows ion energies up to 60 keV, which result in CoSi₂ nanostructures buried in silicon. The processes of damaging and annealing of the substrate due to extremely high current density of the FIB were investigated. The fabrication of nanowires down to 30 nm diameter has been demonstrated.