Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 58: Poster IIb

HL 58.71: Poster

Tuesday, March 8, 2005, 16:30–19:00, Poster TU F

Atomistic Computer Simulations on Ion Beam Synthesis and Decay of CoSi₂ Nanowires — •Lars Röntzsch and Karl-Heinz Heinig — Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden

Nanowires (NWs) and chains of nanocrystals (NCs) embedded in dielectrics or semiconductors are intensively studied regarding their potential application in nanoelectronics. CoSi₂ nanostructures in Si are particularly interesting because of the full compatibility of CoSi₂ with CMOS technology.

Here, we present predictive atomistic computer simulations on the ion beam synthesis of CoSi₂ NWs in Si and their decay into chains of CoSi₂ NCs which are applicable as plasmon waveguides. In order to simulate the Co implantation, the binary collision codes TRIDYN and TRIM were adapted to the particular experimental situation of a finely-focused Co ion beam of 50nm in width. The resulting 3D implantation profile serves as input for a kinetic lattice Monte-Carlo code by means of which nucleation and growth of CoSi₂ precipitates and their coalescence into a CoSi₂ NW are described. From an evolutionary viewpoint, NW synthesis and decay proceed on different time scales. The NW decay into a NC chain (Rayleigh instability) is driven by the minimization of interfacial free energy. In this regard, it will be demonstrated that the orientation of the Co implantation profile to the single crystalline Si matrix influences the stability of the synthesized CoSi₂ NW. Since the system energetically favors the CoSi₂(111)/Si(111) interface, driving faceting forces may occur which accelerate the NW decay into a NC chain.