Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 64: Photovoltaik II

HL 64.5: Vortrag

Mittwoch, 9. März 2005, 11:45–12:00, TU P-N202

Poly-crystalline Si thin-film solar cells on glass: Low-temperature epitaxial thickening of seed layers — •Björn Rau¹, Juliane Klein¹, Jens Schneider¹, Ina Sieber¹, Stefan Gall¹, Michael Stöger-Pollach², Peter Schattschneider², and Walther Fuhs¹ — ¹Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin — ²Technische Universität Wien, Institut für Festkörperphysik, Wiedner Hauptstr. 8-10, A-1040 Wien, Austria

The epitaxial thickening of poly-Si seed layers on low-cost substrates like glass is of great interest for the realisation of the photo-active absorber layer of a poly-Si thin-film solar cell. The use of glass substrates limits all process temperatures to temperatures below the softening point of the glass (<650 ^oC).

Here, we report on the epitaxial growth of Si at temperatures below 600 ^oC on polycrystalline seed layers using electron-cyclotron resonance chemical vapor deposition (ECRCVD). The seed layers were prepared by aluminum-induced crystallization (AIC) of amorphous Si on glass substrates. The quality of the ECRCVD-grown films depends strongly on the orientation of the seed layer grains; a (100) preferential orientation is favourable for epitxial thickening.

Structural and electronic properties of the epitaxial layers are discussed in view to their use in solar cell structures. First solar cell test structures were prepared. Open circuit voltages of above 280 mV were achieved.