Berlin 2005 – scientific programme
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HL: Halbleiterphysik
HL 64: Photovoltaik II
HL 64.8: Talk
Wednesday, March 9, 2005, 12:30–12:45, TU P-N202
ESTIMATION OF INTERFACE DEFECT DISTRIBUTION IN A-SI:H/C-SI HETEROSTRUCTURES — •Saioa Tardon, Gottfried H. Bauer, and Rudolf Brueggemann — Institut fuer Physik, Carl-von-Ossietzsky Universitaet Oldenburg, AG GRECO, 26111 Oldenburg
According to Planck’s generalized law, photon flux emitted from matter is related to the splitting of the quasi-Fermi levels. We have recorded room temperature photoluminescence yield from p-doped crystalline silicon wafer structures after each step of solar cell processing such as rear contact and hetero-interface preparation and translated into the splitting of quasi-Fermi energies. Numerical simulations of identical structures and measurement conditions have been performed in order to fit the calculated pl-yields to experimental ones. An interfacial defect layer with a Gaussian distribution has been considered at the hetero junction and the energy position of the peak Ep−EV has been varied from 0.2 to 0.9 eV. The energetic position of interface defects strongly influences band bending, the occupation of dangling bonds, and consequently the splitting of quasi-fermi levels and final maximal open circuit voltage of a-si:H/c-Si heterojunction solar cells.