Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 7: Transporteigenschaften

HL 7.4: Talk

Friday, March 4, 2005, 11:30–11:45, TU P-N226

Influence of N on the electron transport in (Ga,In)(N,As) probed by magnetotransport under hydrostatic pressure — •J. Teubert, P.J. Klar, W. Heimbrodt, K. Volz, and W. Stolz — Department of Physics and Material Sciences Center, Philipps-University of Marburg, Germany

Incorporation of small amounts of nitrogen into GaAs and (Ga,In)As results in considerable changes of the electronic properties of these materials. Whereas the optical properties are already extensively studied, there is only little knowledge about the effects of nitrogen incorporation onto the electronic transport behaviour of these III-V alloys. Magnetoresistance (MR) and Hall measurements at temperatures between 2 and 280 K and fields up to 10 T show large negative MR effects for n-type samples whereas p-type samples behave like conventional III-V alloys. We present first magnetotransport measurements under hydrostatic pressure up to 20 kbar for n-type (Ga,In)(N,As) samples. All the results can be explained qualitatively by the energetic and spatial disorder effects induced by N in the conduction band.