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HL: Halbleiterphysik

HL 8: III-V Halbleiter I

HL 8.3: Vortrag

Freitag, 4. März 2005, 12:15–12:30, TU P-N202

Landé g factor of donor bound and free electrons in bulk GaAs — •Stefanie Döhrmann, Daniel Hägele, and Michael Oestreich — Universität Hannover, Institut für Festkörperphysik, Abteilung Nanostrukturen, Appelstr. 2, 30167 Hannover

We have measured the low temperature electron Landé g factor g^* in weakly n-doped bulk GaAs. The g factor is precisely determined by means of spin quantum beats which are measured by time resolved photoluminescence spectroscopy using a synchroscan streakcamera for detection. We discuss the dependence of g^* on excitation excess energy, influence of nuclear spins, excitation density and magnetic field. Two different regimes are identified and attributed to donor bound and free electrons, respectively. We find deviations of the g factor from the generally accepted value of -0.44.