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HL: Halbleiterphysik

HL 8: III-V Halbleiter I

HL 8.4: Vortrag

Freitag, 4. März 2005, 12:30–12:45, TU P-N202

Characterization and MOVPE growth of InP:Mn and GaN:Mn — •Alex Philippou, Stefan Weeke, Bert Raehmer, Markus Pristovsek, and Wolfgang Richter — Institute of Solid State Physics, TU-Berlin, Hardenbergstrasse 36, Berlin

Magnetic semiconductors are a promising research field for next generation device physics. In this work the metallorganic vapour-phase growth of Mn doped InP and GaN will be reported. The surface topology was analyzed by atomic force microscopy. Clearly the onset of cluster formation could be seen. X-ray diffraction on superlattices was used for estimating the amount of incorporated Mn to be ≈ 3 %. The magnetic and electronic properties were characterized with temperature and field dependent hall measurements and photoluminescence.