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M: Metallphysik

M 28: Elektronische Eigenschaften

M 28.5: Vortrag

Montag, 7. März 2005, 11:30–11:45, TU H2038

Al-TM(transition-metal) compounds: Non-isotropic electronic transport and bonding networks — •Torsten Schmidt and Heinrich Solbrig — Institute of Physics, Technical University of Chemnitz, D-09107

Alloys of these class, being similar to Si-based materials, cover a wide range of electronic properties between clearly metallic and even insulating. It has been shown experimentally[1] that covalent bonding is common in Al-TM systems.

A molecular-orbital analysis[2] reveals a strong bonding-antibonding splitting at next neighbors. We show that such bonds can combine to form extended bonding-networks which are covered by high valence density. Metallic systems of this kind have enhanced resistivities along directions which cross these bonding network.

We tread the above toppics in terms of a suitably defined network-bond-order by means of orbital based, as well as by scattering approaches.

[1] K. Kirihara et al. Phys. Rev. B68, 014205 (2003) [2] Krajčí and Hafner, J. Phys.: Condens. Matter 14, 5755 (2002)