Berlin 2005 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

M: Metallphysik

M 32: Poster TU B (Symposium Tomographic Methods in Materials Research M-32.32-55)

M 32.50: Poster

Monday, March 7, 2005, 14:30–16:30, Poster TU B

3D reconstruction of an abnormally growing Goss grain in Fe3%Si by FIB serial sectioning and EBSD — •Dorothée Dorner and Stefan Zaefferer — Max-Planck-Institut für Eisenforschung, Abteilung Mikrostrukturphysik und Umformtechnik, 40237 Düsseldorf, Germany

Grain-oriented silicon steel is used in electrical transformers as the core material. It is characterised by a strong crystallographic preferred orientation that develops due to abnormal (discontinuous) growth of {110}<001>-oriented grains (Goss grains). Though various models exist to explain this abnormal growth behaviour, no theory is yet generally accepted. The Σ9 grain boundary theory emphasis the significance of special grain boundaries. The solid state wetting model is based on grain boundary energy considerations and proposes a special grain boundary shape, i.e. wedge-shaped bulges.

In this study, we performed serial sectioning experiments with the focussed ion beam (FIB) technique in combination with crystal orientation measurements using electron backscatter diffraction (EBSD). We investigated the shape of growing Goss grains in 3D as well as the spatial position and crystallography of their grain boundaries. This possibly helps to answer how the anisotropic growth of Goss grains depends on the grain boundary properties.