Berlin 2005 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
MA: Magnetismus
MA 13: Spinabh
ängiger Transport I
MA 13.3: Talk
Saturday, March 5, 2005, 11:15–11:30, TU EMH225
Low temperature measurement of hot electron energy effects in semi-epitaxial magnetic tunnel transistors — •Thomas Hagler, Martin Dumm, Claus Bilzer, Wolfgang Kipferl, and Günther Bayreuther — Universität Regensburg, Universitätsstr. 31, 93040 Regensburg
A magnetic tunnel transistor with Al2O3 tunneling barrier, spin-valve metallic base and epitaxial CoFe/GaAs Schottky barrier has been used to probe the energy dependence of hot electron transport at low temperatures. The magnetocurrent ratio (MCR) reaches values up to 900% in our ultrathin microstructured three terminal devices. The effect of hot electron energy has been studied in the range of 0.6 eV - 2.2 eV. We observe a clear maximum of the MCR at about 1.5 eV electron energy. With increasing temperature (5 K < T < 185 K) the MC remains almost constant, but a rapidly growing spin-independent additional current is measured, due to increasing collector leakage.