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MA: Magnetismus

MA 2: Magnetische dünne Schichten I

MA 2.5: Vortrag

Freitag, 4. März 2005, 11:30–11:45, TU H1012

Magnetic properties of Fe₃Si/GaAs(001) thin films — •K. Lenz¹, E. Kosubek¹, K. Baberschke¹, J. Herfort², H.-P. Schönherr², and K. H. Ploog² — ¹Inst. f. Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin — ²Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplat 5-7, 10117 Berlin

The magnetic properties of Fe₃Si/GaAs(001) hybrid structures are studied. The ferromagnetic films show a high crystalline and interfacial perfection [1]. Structural characterization and SQUID magnetometry has been done [2]. We present ferromagnetic resonance (FMR) studies showing an exceptional narrow linewidth (<17 Oe) confirming the high structural quality. Secondly, anisotropy fields are determined. The easy axis of magnetization is the in-plane [010] direction. The angular dependence of the resonance field reveals a small uniaxial in-plane anisotropy field of ≈10 – 20 G along the [110] direction, being not equivalent to the [110] direction. For samples with higher Si content (less Fe) the in-plane anisotropy field is smaller.

Supported by DFG (Sfb 290, TP A2).

[1] J. Herfort et al., Appl. Phys. Lett. 83, 3912 (2003)

[2] J. Herfort et al., J. Vac. Sci. Technol. B 22, 2073 (2004)