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MA: Magnetismus

MA 2: Magnetische dünne Schichten I

MA 2.6: Vortrag

Freitag, 4. März 2005, 11:45–12:00, TU H1012

Magnetism of thin Fe films on GaAs — •Michal Kosuth, Voicu Popescu, and Hubert Ebert — Department Chemie / Physikalische Chemie, Universität München, Butenandstr. 5-13, D-81377 München, Germany

The electronic and magnetic properties of thin Fe layers on GaAs have been studied using the fully-relativistic TB-KKR band structure method. The most important features observed in the magnetisation profiles are that no magnetically dead layers occur and there is an appreciable induced magnetisation in the semiconductor subsystem. An increase of the orbital moment in the Fe layers both at the surface as well as at the GaAs/Fe interface has been observed.

Calculations of the magnetic anisotropy energy for thin layers of Fe on a GaAs substrate lead to an in-plane magnetisation as the ground state configuration with a noticeable uniaxial character in accordance with experiments.

Within the experiments the Fe surface of the GaAs/Fe system is covered by protective layers of Au (or Cu) to avoid corrosion. Coresponding resultsof calculations on the effects of additional Au (and Cu) layers on top of GaAs/Fe on the magnetic anisotropy will be presented and discussed.