Berlin 2005 – scientific programme
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MA: Magnetismus
MA 20: Poster:Schichten(1-29),Spintrsp(30-45),Ex-Bias(46-63),Spindyn(64-75),Mikromat.(76-80),Cluster(81-94),Abbv.(95-99),Obflm(100-02),SpElek.(103-09),E-Theo(110-14),Mikromag.(115-16),Spin+PÜ(117-26),Mag.Mat.(127-51),Meth.(152-55),Mol.Mag(156-59),Kondo(160-65
MA 20.107: Poster
Monday, March 7, 2005, 14:00–18:00, Poster TU C
Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode — •Jan Schmalhorst, S. Kämmerer, G. Reiss, and A. Hütten — University of Bielefeld, Department of Physics, Nano Device Group, P.O. Box 100131, 33501 Bielefeld, Germany
Spintronics needs half-metallic materials implemented in technologically relevant devices. We prepare Co2MnSi / AlOx / Co7Fe3 junctions showing a tunneling magnetoresistance of 95% at 1mV and 20K. Their inelastic electron tunneling spectra at 20K show typical magnon and phonon excitations in the electrode and the barrier and an additional shoulder around -22mV not observed in Co7Fe3 / AlOx / Ni81Fe19 reference junctions. Furthermore, the bias voltage and temperature dependence of the tunneling magnetoresistance is considerably larger than for the reference junctions. The transport properties are discussed with respect to a variety of current contributions associated with the structural and magnetic properties of the Co2MnSi / AlOx interface.