Berlin 2005 – scientific programme

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MA: Magnetismus

MA 20: Poster:Schichten(1-29),Spintrsp(30-45),Ex-Bias(46-63),Spindyn(64-75),Mikromat.(76-80),Cluster(81-94),Abbv.(95-99),Obflm(100-02),SpElek.(103-09),E-Theo(110-14),Mikromag.(115-16),Spin+PÜ(117-26),Mag.Mat.(127-51),Meth.(152-55),Mol.Mag(156-59),Kondo(160-65

MA 20.32: Poster

Monday, March 7, 2005, 14:00–18:00, Poster TU C

Aluminum oxide tunnel junctions and all-metal mesoscopic spin-valve devices — •Alexander van Staa, Christine M. S. Johnas, Ulrich Merkt, and Guido Meier — Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Jungiusstraße 11, 20355 Hamburg

In tunnel magnetoresistance devices aluminum oxide is a well established material for tunnel barriers. The oxidation of aluminum in pure oxygen has been investigated by variing the contact sizes on the µ m-scale and the oxidation time in all-metal systems. We will apply aluminum oxide tunnel barriers to improve the spin-injection efficiency in lateral Py/Al/Py spin-valve devices, which we have successfully characterized without tunnel barriers. On these devices simultaneous measurements of the spin-valve effect and the anisotropic magnetoresistance of the Py-electrodes have been performed at temperatures of liquid helium. Their micromagnetic behaviour has been imaged with a magnetic-force microscope at room temperature in external magnetic fields.