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MA: Magnetismus
MA 20: Poster:Schichten(1-29),Spintrsp(30-45),Ex-Bias(46-63),Spindyn(64-75),Mikromat.(76-80),Cluster(81-94),Abbv.(95-99),Obflm(100-02),SpElek.(103-09),E-Theo(110-14),Mikromag.(115-16),Spin+PÜ(117-26),Mag.Mat.(127-51),Meth.(152-55),Mol.Mag(156-59),Kondo(160-65
MA 20.41: Poster
Montag, 7. März 2005, 14:00–18:00, Poster TU C
Spin-dependent tunneling in the nearly-free-electron model — •Peter Bose1, Ingrid Mertig1, and Jürgen Henk2 — 1FG Theoretische Physik, FB Physik, Martin-Luther-Universität Halle-Wittenberg, D-06099 Halle an der Saale — 2Max-Planck-Institut für Mikrostrukturphysik, D-06120 Halle an der Saale
Spin-dependent ballistic transport through a tunnel barrier is treated within the one-dimensional nearly-free-electron model. The comparison with free electrons reveals significant effects of band gaps, in particular in the bias dependence. The results can be qualitatively explained by the number of incident and transmitted states in the leads. With an extension to ferromagnetic leads the bias dependence of tunnel magneto-resistance is discussed.