Berlin 2005 – scientific programme
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MA: Magnetismus
MA 3: Magnetische Abbildungsverfahren
MA 3.5: Talk
Friday, March 4, 2005, 11:30–11:45, TU H1028
Micromagnetic properties of epitaxial MnAs films on GaAs studied by XMCDPEEM and LEEM — •Jyoti Mohanty1, Thorsten Hesjedal1, Lutz Däweritz1, Klaus H. Ploog1, Salia Cherifi2,3, Stefan Heun2, Andrea Locatelli2, and Ernst Bauer2,4 — 1Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin, Germany — 2Sincrotrone Trieste, 34012 Basovizza, Italy — 3CNRS-Laboratoire Louis Néel, 38042 Grenoble, France — 4Department of Physics and Astronomy, Arizona State University, Tempe, U.S.A
Combing a ferromagnet, MnAs, with a widely used III-V semiconductor, GaAs, has special importance for future spintronics applications. MBE grown MnAs on GaAs exhibits a sharp crystal interface and has proven to be an interesting candidate for spin-injection and magneto-logic applications. In MnAs films on GaAs (001), the involved strain causes a coexistence of ferromagnetic α- and paramagnetic β-MnAs over a temperature range of 10-40∘C. The two phases arrange in a regular stripe pattern along MnAs [0001] direction with the width of the stripes being a function of temperature, while the stripe period is determined by the film thickness. We employed X-ray magnetic circular dichroism photoemission electron microscopy (XMCDPEEM) in combination with low energy electron microscopy (LEEM) to study the magnetic domain structure as a function of stripe width (i.e. temperature) and film thickness.