Berlin 2005 – scientific programme
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MA: Magnetismus
MA 33: Messmethoden, Anisotropie, Spinelektronik/Spininjektion
MA 33.9: Talk
Wednesday, March 9, 2005, 13:00–13:15, TU EMH225
Magnetic tunneling junctions with the Co2Cr0.6Fe0.4Al Heusler compound — •Andrés Conca, Martin Jourdan, Gerhard Jakob, and Hermann Adrian — Institut für Physik, Johannes Gutenberg Universität, Staudinger Weg 7, 55128, Mainz, Germany.
The use of half metallic electrodes in magnetic tunnelling junctions (MTJ’s) will result in a large increase of the TMR ratio. We used the full Heusler alloy Co2Cr0.6Fe0.4Al as bottom electrode for MTJ’s. This compound is expected to show half metallicity.
The junctions were deposited in a chamber with a base pressure of 3.0·10−8 mbar by dc magnetron sputtering using metallic shadow masks with Co as counter electrode and AlOx as barrier. We present measurements of the magnetoresistive differential conductivity between 4 and 300K. The properties of the barrier are analyzed by applying the Simmons model to the bias dependent differential conductivity. Magnetic properties of the junctions were analyzed by VSM, SQUID and Kerr effect methodes.