Berlin 2005 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

O: Oberflächenphysik

O 15: Postersitzung (Adsorption an Oberfl
ächen, Epitaxie und Wachstum, Organische Dünnschichten, Oxide und Isolatoren, Rastersondentechniken, Zeitaufgelöste Spektroskopie, Methoden)

O 15.30: Poster

Friday, March 4, 2005, 17:00–20:00, Poster TU D

MOVPE growth analysed by in-situ SPM — •Raimund Kremzow, Bert Rähmer, Markus Breusing, Markus Pristovsek, and Wolfgang Richter — Technische Universität Berlin, IFP, Sekr. PN 6-1 Hardenbergstr. 36, 10623 Berlin

To get insight into the formation of nanostructures, an in-situ analysis of the sample morphology during the growth is highly desirable. Especially for the most common technique epitaxial method, (metalorganic vapour phase epitaxy – MOVPE). At present no tool exists which can measure the surface topography in real time and real space with high spatial resolution. We developed a specially designed SPM to deal with the limited space and high temperatures in the MOVPE reactor (caused by the thermal conductivity of the carrier gas). In addition, vibrational disturbances introduced by the pumping system and gas-flow had to be minimized. Another problem arises by the need not to disturb the actual layer growth. Therefore, the tip has to be longer than 2 cm in order to bridge the distance between liner tube and susceptor. The set-up we present, continuosly tolerates sample and gas phase temperatures up to 550^∘C without degradation of the piezo elements.