Berlin 2005 – wissenschaftliches Programm
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O: Oberflächenphysik
O 15: Postersitzung (Adsorption an Oberfl
ächen, Epitaxie und Wachstum, Organische Dünnschichten, Oxide und Isolatoren, Rastersondentechniken, Zeitaufgelöste Spektroskopie, Methoden)
O 15.37: Poster
Freitag, 4. März 2005, 17:00–20:00, Poster TU D
Influence of the Molecular Structure on the Interface Formation between Magnesium and Organic Semiconductors — •Gianina Gavrila1, Mihaela Gorgoi1, Walter Braun2, and Dietrich R.T. Zahn1 — 1Institut für Physik, Technische Universität Chemnitz, D-09107, Chemnitz, Germany — 2BESSY GmbH, Albert-Einstein-Straße 15, D-12489 Berlin, Germany
Magnesium is often used in organic devices as a low work function metal contact. On the other hand it is a highly reactive metal. Its reactivity may also depend of the detailed structure of organic molecules involved. Here, 15 nm thick films of perylene derivatives, i.e. 3,4,9,10-perylenetetracarboxylic dianhydride -PTCDA, 3,4,9,10-perylenetetracarboxylic diimide-PTCDI and dimethyl-3,4,9,10-perylenetetracarboxylic diimide-DiMe-PTCDI were deposited onto sulpfur passivated GaAs substrates. A detailed study of the interface formation between these materials and Mg using high resolution photoemission spectroscopy is presented. The differences observed in the evolution of C1s, O1s, N1s and Mg2p core levels and valence band spectra as a function of Mg thickness differences are related to the distinct molecular end groups and with the degree to which the metal atoms diffuse into the layer.