Berlin 2005 – wissenschaftliches Programm
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O: Oberflächenphysik
O 15: Postersitzung (Adsorption an Oberfl
ächen, Epitaxie und Wachstum, Organische Dünnschichten, Oxide und Isolatoren, Rastersondentechniken, Zeitaufgelöste Spektroskopie, Methoden)
O 15.41: Poster
Freitag, 4. März 2005, 17:00–20:00, Poster TU D
In-situ X-ray Diffraction study of organic-organic heterostructures of Diindenoperylene and copper-hexadecafluoro-phthalocyanine — •Esther Barrena1, Dimas García de Oteyza1, J. Oriol Ossó2, Stefan Sellner1, and Helmut Dosch1,3 — 1Max-Planck-Institut für Metallforschung, Heisenbergstr.3, 70569 Stuttgart, Germany — 2Institut de Ciència de Materials de Barcelona CSIC, 08190 Bellaterra, Spain — 3Institut für Theoretische und Angewandte Physik, Universität Stuttgart, 70550 Stuttgart, Germany
Many organic devices like Light-Emitting Diodes (OLEDs), solar cells or ambipolar transistors are based on p-n junctions of organic semiconductors. Here we present an in-situ X-ray diffraction study of the structure of bilayers of Diindenoperylene (DIP) and copper-hexadecafluoro-phthalocyanine (F16PcCu), p-type and n-type semiconductors, respectively. The molecular films have been grown at different temperatures on silicon oxide by Organic Molecular Beam Deposition. We show that DIP on F16PcCu grows in the Stransky-Krastanov growth mode at 120∘C. Interestingly, a change in the F16CuPc structure at the organic-organic interface is induced. At 25∘C and -10∘C, DIP molecules form a well ordered film and no structural rearrangement of F16PcCu is observed. For bilayers grown in the inverse order, i.e F16CuPc on DIP, changes on the F16CuPc structure are observed as well. Complementary studies by AFM support the results.