Berlin 2005 – scientific programme

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O: Oberflächenphysik

O 15: Postersitzung (Adsorption an Oberfl
ächen, Epitaxie und Wachstum, Organische Dünnschichten, Oxide und Isolatoren, Rastersondentechniken, Zeitaufgelöste Spektroskopie, Methoden)

O 15.51: Poster

Friday, March 4, 2005, 17:00–20:00, Poster TU D

Applications of High Speed Scanning Capacitance Spectroscopy for the analysis of semiconductor microdevices — •Martin von Sprekelsen and Roland Wiesendanger — University of Hamburg, Institute of Applied Physics and Microstructure Research Center, Jungiusstrasse 11, D-20355 Hamburg, Germany

High spatial resolution down to the nanometer scale becomes essential for analytical tools for semiconductor devices. On the other hand, in the semiconductor industry, scanning capacitance microscopy (SCM) is an established analytical method to obtain 2D-dopant profiles of charge carrier concentrations; these profiles are usually taken at a constant bias voltage (Vbias). However the spatial resolution of SCM is limited by unavoidable side effects such as mobile surface charges or the strong influence of Vbias on the SCM profiles. To overcome these restrictions, we develop Highspeed Scanning Capacitance Spectroscopy (HSSCS) which is performed by modulating the Vbias voltage at a frequency in the kHz-range. The modulated electric field virtually traps mobile surface charges. Furthermore, the highspeed method allows us to measure capacitance spectra for Vbias, by which we can analytically get rid of the infulence of Vbias.

We present HSSCS dopant profiles on Si-semiconductor samples of ultra-shallow junctions with high resolution down to 10 nm. Further results of HSSCS on III-V-semiconductors samples are also discussed.