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O: Oberflächenphysik
O 18: Adsorption an Oberfl
ächen II
O 18.1: Vortrag
Samstag, 5. März 2005, 10:45–11:00, TU EB301
Experimental determination of surface stress of H/Si(001) — •Peter Kury1, Jan van Heys2, Eckhard Pehlke2, and Michael Horn-von Hoegen1 — 1Institut für Laser- und Plasmaphysik, Universität Duisburg-Essen, 45141 Essen — 2Institut für Theoretische Physik und Astrophysik, Universität Kiel, 24098 Kiel
The adsorption of hydrogen on Si(100) is one of the most profoundly investigated model systems for the study of reaction dynamics on semiconductor surfaces. The interest in this system, however, is not only motivated by fundamental questions regarding the chemisorption dynamics, but also by the technologically relevant epitaxial growth by means of chemical vapor deposition using silanes. Surface stress is an important surface property, intimately linked to the electronic structure of the surface, which is known to provide the driving force for structure formation on mesoscopic length scales, e.g. in case of the clean Si(100) surface. In the system H/Si(100), however, the role of surface stress is yet unknown. We present stress data for this system as a function of hydrogen coverage measured by SSIOD (surface stress induced optical deflection [1]) and compare to the theoretical surface stress tensor for various partially hydrogen-covered Si(100) surfaces predicted by density-functional total-energy calculations. [1] P. Kury et al., Rev. Sci. Instrum., in press.