DPG Phi
Verhandlungen
Verhandlungen
DPG

Berlin 2005 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

O: Oberflächenphysik

O 20: Organische Dünnschichten II

O 20.2: Talk

Saturday, March 5, 2005, 11:00–11:15, TU EB202

A simple model system for silicon/organic interfaces: Si(111)-CH3 — •Ralf Hunger1, Rainer Fritsche1, Bengt Jaeckel1, Taek Lim1, Lauren J. Webb2, Nathan S. Lewis2, and Wolfram Jaegermann11Darmstadt University of Technology, Surface Science Division, Department of Materials Science, Petersenstr. 23, 64287 Darmstadt — 2California Institute of Technology, Division of Chemistry and Chemical Engineering, Pasadena, CA 91125

Conceptually, methyl-terminated silicon (111), Si(111)-CH3, is one of the simplest possible silicon-organic interface structures. The Si(111)-CH3 structure may serve as a reference system for more complex silicon/organic interfaces. It has the inherent advantage that the silicon surface is chemically and electronically passivated by the methyl-termination.
Employing high resolution synchrotron and ultraviolet photoelectron spectroscopy and low energy electron diffraction, we have analyzed the properties of Si(111)-CH3 surfaces that were prepared in a wet chemical two-step chlorination/alkylation process. The investigations show that well-defined surfaces with high chemical stability and near ideal electronic passivation could be obtained. A (1x1) surface structure, a well-defined carbon 1s core level emission, and in the Si2p line a distinct surface core level shift of the carbon-bonded surface silicon atoms are found. According to these results, methyl-terminated Si(111) appears as suitable template for the preparation of silicon/organic hybrid device structures.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2005 > Berlin