Berlin 2005 – scientific programme
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O: Oberflächenphysik
O 21: Elektronische Struktur II
O 21.6: Talk
Saturday, March 5, 2005, 12:00–12:15, TU EB107
Electronic structure of NiO thin films on Ag(001) — •Markus Däne1, Diemo Ködderitzsch1, Wolfram Hergert1, Arthur Ernst2, Walter M. Temmerman3, Zdzislawa Szotek3, Christian Hagendorf1, Henning Neddermeyer1, and Wolf Widdra1 — 1Fachbereich Physik, Martin Luther Universität Halle-Wittenberg, Friedemann-Bach-Platz 6, 06108 Halle, Germany — 2Max Planck Institute of Microstructure Physics, 06120 Halle, Germany — 3Daresbury Laboratory, Daresbury, Warrington WA4 4AD, United Kingdom
In this work we apply the self-interaction corrected LSDA formalism, as implemented in the TB-LMTO-ASA method, to study the electronic and magnetic structure of thin transition metal oxide (TMO) films on metallic substrates. Here the properties of NiO thin films (up to 5 layers) on the Ag(001) surface are investigated. Relaxations at the Ag oxide interface are taken into account. The gap formation of the oxide thin film depending on film thickness and magnetic structure is studied. The influence of the metallic substrate is revealed by comparison with freestanding NiO films. The results can be compared to experimental data obtained by scanning tunneling microscopy and spectroscopy (STM/STS) for one to three layer thick NiO islands on Ag(001). The variation of the normalized differential conductance is discussed with respect to the calculated local density of states.