Berlin 2005 – wissenschaftliches Programm

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O: Oberflächenphysik

O 36: Postersitzung (Elektronische Struktur, Grenzfl
äche fest-flüssig, Halbleiteroberfl
ächen und -grenzfl
ächen, Nanostrukturen, Oberfl
ächenreaktionen, Teilchen und Cluster, Struktur und Dynamik reiner Oberfl
ächen)

O 36.25: Poster

Montag, 7. März 2005, 15:00–18:00, Poster TU F

Growth of ultrathin silver films on Ge(100) — •Olaf Skibbe, Fanzhen Meng, Andreas Priebe, and Annemarie Pucci — Kichhoff-Institut für Physik, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 227, 69120 Heidelberg

The growth of ultrathin metal films on semiconductor surfaces is of interest for different reasons. On the one hand for the technical application of conductors at decreasing dimensions, on the other hand for the understanding of the growth mechanism. The system Ag/Ge(100) shows an alloy phase [1] and indications of a superconducting phase at low temperatures [2].

For in situ investigation of the growth of metal films with high thickness resolution infrared spectroscopy provides a particularly suitable method. By measuring the frequency dependent transmission of the film, one can get information about it’s metallic properties and morphology. For the growth of a silver film on Ge(100) a coalescence thickness of about 1.3 nm could be determined. The measurement of absorption bands of adsorbed molecules (e.g. CO) gives further knowledge of the physical properties of the film. The preparation of the Germanium sample and the available measurements have been carried out in UHV environment. Ex situ atomic force microscopy was performed afterwards.

[1] L. Chan and E. Altman, Phys. Rev. B 66, 155339 (2002).

[2] K. Hattori, Y. Takahashi, T. Iimori, and F. Komori, Surf. Sci. 357, 361 (1996).