Berlin 2005 – wissenschaftliches Programm
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O: Oberflächenphysik
O 36: Postersitzung (Elektronische Struktur, Grenzfl
äche fest-flüssig, Halbleiteroberfl
ächen und -grenzfl
ächen, Nanostrukturen, Oberfl
ächenreaktionen, Teilchen und Cluster, Struktur und Dynamik reiner Oberfl
ächen)
O 36.26: Poster
Montag, 7. März 2005, 15:00–18:00, Poster TU F
Metallic indium cluster growth on InP(001) — •M. Himmerlich1, M.C. Zeman1,2, T. Stolz1, M. Gubisch1, M. Eremtchenko1, S. Krischok1, R.J. Nemanich2, and J.A. Schaefer1 — 1Institut für Physik und Zentrum für Mikro- und Nanotechnologien, TU Ilmenau, P.O. Box 100565, 98684 Ilmenau, Germany — 2Department of Physics, North Carolina State University, Raleigh, NC, 27695
We present a microscopic and spectroscopic study of indium cluster formation on the InP(001) surface. AFM investigations reveal the appearance of metallic nanoclusters (10–50 nm in diameter) after Ar+ sputtering and subsequent annealing steps. The shape and dimension of the clusters were studied using microscopic techniques (AFM, PEEM and SEM). In parallel the chemical composition, the electronic structure of the valence band and the surface plasmon were investigated by spectroscopic methods (laterally resolved UPS, XPS and HREELS). The combination of these techniques provides detailed information about the cluster formation and its evolution during annealing steps. The influence of the metal droplets on the depletion layer of the semiconductor leads to a shift of the surface carrier plasmon frequency.