Berlin 2005 – wissenschaftliches Programm

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O: Oberflächenphysik

O 36: Postersitzung (Elektronische Struktur, Grenzfl
äche fest-flüssig, Halbleiteroberfl
ächen und -grenzfl
ächen, Nanostrukturen, Oberfl
ächenreaktionen, Teilchen und Cluster, Struktur und Dynamik reiner Oberfl
ächen)

O 36.42: Poster

Montag, 7. März 2005, 15:00–18:00, Poster TU F

Nanocontacts and Nanowires: Electromigration effects in thin Ag structures — •G. Gardinowski, C. Tegenkamp, and H. Pfnür — Institut für Festkörperphysik, Abteilung Oberflächen, Appelstr. 2, 30167 Hannover, Germany

In order to characterize nanostructures electrically, contacts in the nm - region are of importance. A controlable planar breakjunction technique of high yield is particularly interesting, but requires a nearly total understanding of the fabrication method. We demonstrate that it is possible to produce desireable contacts via electromigration. Experiments with lithographic prestructured Ag-wires on Si (100) with different shapes and thickness were carried out in constant- current and constant - voltage mode monitored by SEM. The procedure can be devided into two phases. The first shows the typical electromigration effects like the void/hillock formation and the influence of defects inside the Ag - structure until the breakdown of the wire. Nanocontacts with reproduceable separation lengths in the range of 10-20 nm can be produced as seen by SEM/AFM. The second phase is typical for the constant - voltage mode and demonstrates a way for the self-assembling of Ag - nanowires. After the formation of a planar breakjunction an interesting growth behavior sets in. Field effects cause a local melting of the silver structure which leads to the formation of a crystalline silver wire with no defects up to length of 200 µm. As seen in AFM - line scans, the width is around 700 nm and the height around 200 nm.