Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Oberflächenphysik

O 38: Halbleiteroberfl
ächen und -grenzfl
ächen

O 38.4: Vortrag

Dienstag, 8. März 2005, 11:30–11:45, TU EB301

Electronic structure of Ge(001) surface studied by room temperature scanning tunneling spectroscopy — •Oguzhan Gurlu^1,2, Harold J.W. Zandvliet¹, and Bene Poelsema¹ — ¹Solid State Physics Group, MESA+ Research Institute, University of Twente, PO. Box. 217, 7500AE Enschede, The Netherlands — ²Max-Planck Institut fur Festkorperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany

The surface electronic structure of Ge(001) has been studied by scanning tunneling spectroscopy. The measured surface densities of states unequivocally reveals the presence of a metallic state on the (2x1) domains, which is absent on the c(4x2) domains. This metallic state, so far only observed in integral measurements, is attributed to the flip-flopping dimers, which constitute the (2x1) domains. Our data also reveals a set of previously unresolved surface states, in perfect agreement with published theoretical predictions.