Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Oberflächenphysik

O 38: Halbleiteroberfl
ächen und -grenzfl
ächen

O 38.9: Vortrag

Dienstag, 8. März 2005, 12:45–13:00, TU EB301

Characterization of the growth peculiarities of Physical Vapor Deposited CdS on Cu(In,Ga)Se₂ Thin Film Solar Cells Using Kelvin Probe Force Microscopy in Ultrahigh Vacuum — •Ferdinand Streicher, Marin Rusu, Christian A. Kaufmann, Axel Neisser, Susanne Siebentritt, Martha Ch. Lux-Steiner, and Thilo Glatzel — Hahn-Meitner-Institut Berlin, Glienicker Strasse 100, 14109 Berlin, GERMANY

High-efficiency thin-film solar cells based on Cu(In,Ga)Se₂ absorber material have been developed using CdS buffer layers deposited by chemical bath deposition (CBD). However, for industrial production, an in-line vacuum deposition such as, e.g. physical vapour deposition (PVD) is preferred. This contribution reports on the preparation and characterization of highly-efficient ZnO/CdS/Cu(In,Ga)Se₂ solar cells with PVD-deposited CdS buffer layers. The PVD-CdS preparation conditions were optimized for the deposition of the CdS layers suitable for highly-efficient (14%, AM1.5, total area) thin film solar cells. Compared to the CBD deposition the ZnO/PVD-CdS/Cu(In,Ga)Se₂ solar cell devices show an increased short circuit current while open circuit voltage is decreased. The surface analysis of the CdS growth process with Kelvin probe force microscopy (KPFM) reveals, that the CdS deposition is retarded at the grainboundaries of the absorber which could be a reason for the observed device behavior.