Berlin 2005 – scientific programme
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O: Oberflächenphysik
O 41: Elektronische Struktur III
O 41.2: Talk
Tuesday, March 8, 2005, 11:00–11:15, TU EB107
Electronic structure of misfit layer chalcogenides — •Matthias Kalläne1, Hans Starnberg2, Kai Rossnagel1, Sven Stoltz2, and Lutz Kipp1 — 1Institut für Experimentelle und Angewandte Physik, Universität Kiel, D-24098, Germany — 2Department of Physics, Göteborg University and Chalmers University of Technology, SE-412 96 Göteborg, Sweden
Misfit layer chalcogenides (MX)1+x(TX2)m (M=Sn, Pb, Sb, Bi; T=Ti, V, Cr, Nb, Ta; X=S, Se; 0.08<x<0.28; m=1,2,3) result from an alternate stacking of MX and TX2 slabs where the cubic MX layers are incommensurate with the hexagonal TX2 layers in one of the two crystallographic directions parallel to the layers. To reach a better understanding of the electronic structure of these compounds we have performed angle-resolved photoelectron spectroscopy and photoelectron spectromicroscopy experiments. Our results reveal details about charge transfer from the MX to the TX2 layers, interlayer bonding, possible effects of the incommensurability, and the domain structure of the cleavage planes. The photoemission experiments were carried out at HASYLAB (Germany), MAXLAB (Sweden), and the ALS (USA). Work at the University of Kiel is supported by DFG Forschergruppe FOR 353.