Berlin 2005 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Oberflächenphysik
O 49: Epitaxie und Wachstum II
O 49.2: Vortrag
Dienstag, 8. März 2005, 16:00–16:15, TU EB407
Modelling of ultrathin SixGe1−x film growth on Si(111) by chemical vapour deposition — •Selvi Gopalakrishnan, H. Rauscher, and R.J. Behm — Abt. Oberflächenchemie und Katalyse, Universität Ulm, 89069
Experimental studies on step width, temperature and gas ratios established [1] that these properties are important factors for epitaxial growth by chemical vapour deposition (CVD). We investigated the effect of these factors on the sticking coefficients of the Si and Ge containing species and on the growth morphology of ultrathin SixGe1−x films grown on the Si(111) substrate by CVD with Si2H6 and GeH4 as precursor gases. The CVD films were grown from a 7:3 GeH4:Si2H6 gas mixture at temperatures of 750K and 850K, a deposition pressure of 2.5 × 10−5 mbar and with wafers of differing terrace width of 1500A and 6000A, were investigated by STM and XPS. The data on the sticking coefficients of the Si and the Ge containing species and the total (STM) and the Ge (XPS) coverages were used to model the kinetics of the ultrathin SixGe1−x film growth at low CVD deposition pressures. Ref:[1] H.Rauscher, J.Braun and R.J. Behm, SixGe1−x ultrahigh-vacuum chemical vapour deposition on Si(111)-7×7 from GeH4/Si2H6 mixtures. Appl. Phys. A. 76, 711-719(2003)