Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Oberflächenphysik
O 49: Epitaxie und Wachstum II
O 49.6: Vortrag
Dienstag, 8. März 2005, 17:00–17:15, TU EB407
Mechanisms of grain growth, coarsening and texture formation in Ag-films on an amorphous Substrate — •Celia Polop1, Christian Rosiepen1, Enrique Rodriguez-Cañas2, and Thomas Michely1 — 1I.Physikalisches Institut RWTH-Aachen — 2Instituto de Ciencia de Materiales de Madrid, CSIC, Spain
In order to study grain growth and texture evolution of a polycrystalline thin metal film, a well defined substrate was carefully constructed. The Si(001) 2x1 surface was prepared under UHV conditions and subsequently amorphised by a dose of 1,4*E15 ions/cm2 of 5 keV Ne+. Then Ag was deposited at 300K. The thin film morphological evolution was investigated for films up to 32nm thickness. Analysing the film with scanning tunneling microscopy (STM) an x-ray diffraction (XRD), three distinct stages of grain growth, grain coalescence and film formation are quantitatively characterized by roughness and length scale determination. Key elements of film evolution are also identified directly in the STM topographs.