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15:45 |
O 49.1 |
In-situ STM Measurements during MOVPE — •M. Breusing, B. Rähmer, M. Pristovsek, R. Kremzow, and W. Richter
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16:00 |
O 49.2 |
Modelling of ultrathin SixGe1−x film growth on Si(111) by chemical vapour deposition — •Selvi Gopalakrishnan, H. Rauscher, and R.J. Behm
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16:15 |
O 49.3 |
Thin CuInS2 films prepared by MOMBE: Interface and surface properties — •Carsten Lehmann, Christian Pettenkofer, and Wolfram Calvet
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16:30 |
O 49.4 |
Facet and layer formation of II-VI semiconductors on GaSe van der Waals terminated Si(111) — •Bengt Jaeckel, Rainer Fritsche, Andreas Klein, and Wolfram Jaegermann
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16:45 |
O 49.5 |
Real-time study of orientational transitions during organic thin film growth — •Stefan Kowarik, Alexander Gerlach, Stefan Sellner, Frank Schreiber, Leide Cavalcanti, and Oleg Konovalov
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17:00 |
O 49.6 |
Mechanisms of grain growth, coarsening and texture formation in Ag-films on an amorphous Substrate — •Celia Polop, Christian Rosiepen, Enrique Rodriguez-Cañas, and Thomas Michely
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17:15 |
O 49.7 |
Fe on GaN: Growth investigations — •Ralph Meijers, Raffaella Calarco, Hans Lüth, Matthias Buchmeier, and Daniel Bürgler
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17:30 |
O 49.8 |
Growth of NiO on Ag(100) Studied by In-Situ X-Ray Scattering — •E. Schierle, E. Weschke, A. Gottberg, and S.R. Krishnakumar
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17:45 |
O 49.9 |
Growth and atomic structure of NiO and MnO films on Pt(111): In-situ STM experiments at elevated temperatures — •Christian Hagendorf, Henning Neddermeyer, and Wolf Widdra
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18:00 |
O 49.10 |
Bestimmung des Koinzidenzgitters eines Aluminiumoxidfilms auf Ni3Al(111) — •Stefan Degen, Aleksander Krupski, Marko Kralj, Andreas Langner, Conrad Becker, Moritz Sokolowski und Klaus Wandelt
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18:15 |
O 49.11 |
Formation, propagation and stability of stacking fault defects in Iridium thin films — •Sebastian Bleikamp, Celia Polop, Arne Thoma, Gerhard Pirug, and Thomas Michely
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