Berlin 2005 – scientific programme

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O: Oberflächenphysik

O 52: Elektronische Struktur IV

O 52.7: Talk

Wednesday, March 9, 2005, 12:15–12:30, TU EB301

Quantum Well States in thin films of In on Si(100) — •Jan Hugo Dil, Jeong-Won Kim, Thorsten Ulrich Kampen, and Karsten Horn — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Abteilung Molekülphysik, Faradayweg 4-6, 14195 Berlin

Experiments with ultrathin metal layers on metal or semiconductor substrates have recently resulted in a wide variety of discoveries; anomalous behaviour of the hall effect, self organisation into magic or preferred layers, and strong electron correlation effects are just a few of them. Moreover the quantum well states (QWS) formed in these structures allow for detailed studies of electron-phonon coupling. Here, we present a study of atomically flat layers of indium grown on a Si(100) substrate. QWS are readily observed for a wide range of coverages. These can be discriminated into QWS lying above and below a bandgap. This bandgap corresponds to the one observed in the valenceband of bulk indium. In the direction parallel to the interface the QWS show a free electron like behaviour as expected from DFT calculations. In the energy region where the QWS cross the Fermi energy with free electron like behaviour electron-phonon coupling may be observed.