Berlin 2005 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Oberflächenphysik
O 55: Epitaxie und Oberfl
ächenreaktionen
O 55.7: Vortrag
Mittwoch, 9. März 2005, 12:15–12:30, TU EB107
Etch figure analysis by scanning force microscopy — •Christian Motzer and Michael Reichling — Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, 49069 Osnabrück
The method of etching crystals was established to determine crystalographic information like orientation of unknown crystals and later to detect structural defects. Etching analysis strongly assisted the semiconductor industry to produce crystals being free from dislocations and other defects. Analysing etching figures is usually done with optical microscopy hence strongly limited in resolution. For high resolution analysis of etch figures we applied the scanning force microscope. We investigated ex-situ CaF2(111) cleavage plates which were etched in several acids like sulfuric acid, phosphoric acid, hydrochloric acid and nitric acid. SFM reveals new and profound details of the etched plates which are specific to the surface reaction chemistry which is sensitive to surface and bulk defects. AFM measurements allowed to detect ditrigonal etch pit formation and delayed precipitation formation after etching.