Berlin 2005 – scientific programme

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P: Plasmaphysik

P 3: Diagnostik 1

P 3.2: Talk

Friday, March 4, 2005, 11:30–11:45, HU 3059

Study of plasma parameters in a HMDSO-containing RF discharge — •Jens Matheis¹, Christian Oehr², and Achim Lunk¹ — ¹Universität Stuttgart, Institut für Plasmaforschung, Pfaffenwaldring 31, 70569 Stuttgart — ²Fraunhofer Institut für Grenzflächen- und Bioverfahrenstechnik, Nobelstrasse 12, 70569 Stuttgart

Plasma polymerisation of hexamethyldisiloxane (HMDSO) is widely used in plasma technology for thin film deposition in the field of surface protection, electronics or even biomedical applications. Therefore it is important to know the relevant plasma parameters for optimisation deposition process and improving film quality. Measurements were performed in a symmetric capacitively coupled RF (13.56 MHz) discharge of HMDSO mixed with different carrier gases as O₂ and Ar. The pressure varies between 10 Pa and 50 Pa. The power applied was changed between 10 and 200 W. The electron energy distribution function (EEDF) was measured with a heated Langmuir probe. The distortion of the current-voltage characteristics by RF plasma potential fluctuations is suppressed using an active compensation circuit. Compensations up to the second harmonics of the fundamental frequency are possible. In addition, the RF voltage applied to the reactor was monitored by a V/I probe. Langmuir probe measurements were performed at three pressures (12, 24 and 48 Pa) with varying RF power for Ar, O₂ and pure HMDSO. The paper shows the measured dependencies of EEDF, electron density, floating potential on external parameters.