Berlin 2005 – scientific programme

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SYFS: Nichtflüchtige Festkörperspeicher

SYFS 2: Ferroelectric and dielectric memories

SYFS 2.3: Talk

Saturday, March 5, 2005, 15:30–15:45, TU HE101

Resistive switching in Ba_0.7Sr_0.3TiO₃ thin films — •Rob Oligschlaeger¹, Silvia Karthäuser², Regina Dittmann², Kristof Szot², Rene Meyer², and Rainer Waser^1,2 — ¹Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Germany — ²CNI, Dept. IFF, Research Center Jülich, Germany

Recently, resistive switching of dielectric perovskite-type thin films has attracted a lot of attention in view of its potential for non-volatile information storage in future generation high speed random access memories [1]. We investigated resistive switching of capacitor-like thin film structures of Ba_0.7Sr_0.3TiO₃ (BST), prepared by pulsed laser deposition. SrRuO₃ (SRO) grown on (001) oriented SrTiO₃ substrates was used as bottom electrode. Pt top electrodes were deposited by sputtering. Electrical measurements show stable hysteretic behaviour in the current-voltage curve. Positive or negative voltage pulses are employed to switch the resistance of the oxide films between a low- and a high-impedance state. The temperature dependence of the current in both states was determined. Read-write measurements over 10⁴ cycles show some fatigue in the resistance states. Utilizing different write voltages for the pulses we achieved stable multilevel switching of the resistance. We will discuss the dopant dependence and the potential physical mechanism of the switching phenomena.
[1] A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel and D. Widmer, Appl. Phys. Lett. 77, 139 (2000)