Berlin 2005 – scientific programme

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SYFS: Nichtflüchtige Festkörperspeicher

SYFS 4: Poster

SYFS 4.6: Poster

Saturday, March 5, 2005, 08:30–16:30, Poster TU C

Resistive switching in ferroelectric materials — •Hermann Kohlstedt¹, Adrian Petraru¹, René Meyer¹, Nicholas Pertsev², Ulrich Poppe¹, and Rainer Waser¹ — ¹Forschungszentrum Jülich GmbH, Institut für Festkörperforschung and CNI, Germany — ²A. F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia

We present a model and experimental results for a novel ferroresistive switching device for non-volatile memory applications with a non-destructive read-out scheme. The device compromises a metal-dielectric-ferroelectric-metal layer sequence in which the dielectric and ferroelectric films are considered to be slightly conductive. We show that the resistance of this devices depends on the polarization state of the ferroelectric material. Experimental results on SRO/PZT(50/50)/Pt and SRO/PZT(20/80)/Pt mesa structures show indeed two resistive branches which can be reached by applying sufficiently large voltage pulses. The result will be compared to recently published resistive switching effects observed in non-ferroelectric complex oxides layer structures. Moreover in a short overview on resistive switching in insulators we show how complex this phenomenon is and that resistive switching is far from being understood. Finally we present a method based on a conductive AFM in the contact mode, to distinguish ferroelectric switching from non-ferroelectric resistive switching events by a simultaneous acquisition of d33 (V), C(V) and I (V).