Berlin 2005 – scientific programme

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SYFS: Nichtflüchtige Festkörperspeicher

SYFS 4: Poster

SYFS 4.8: Poster

Saturday, March 5, 2005, 08:30–16:30, Poster TU C

Electrical behavior of size-controlled Si nanocrystals arranged as single layer — •Tiezheng Lu, Jun Shen, Marin Alexe, Roland Scholz, and Margit Zacharias — Max Planck Institute of Microstructure Physics, Weinberg.2 06120,Halle

A MOS structure was fabricated containing a single layer of size controlled Si nanocrystal. Size control was realized by using a SiO2/SiO/SiO2 superlattice with the embedded SiO layer having the thickness of the desired Si nanocrystals and using a 1100^∘C annealing to form the around 4 nm size Si nanocrystals. Current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) were realized. From the Fowler-Nordheim plot an effective barrier height of 1.6 eV was estimated for our Si nanocrystals. A charge density of 3x1012/cm2 was measured which is in the range of the approximated Si nanocrystal density. The conductance method reveals a very low interface charge of our MOS structure. Electron trapping, storing, and de-trapping within the Si nanocrystals will be discussed based on the measurements.