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08:30 |
SYFS 4.1 |
Reduction of azimuthal domains in (100)- and (118)-oriented ferroelectric Bi3.25La0.75Ti3O1 2 films making use of YSZ and Si substrates with definite off-cut — •Sung Kyun Lee, Ho Nyung Lee, and Dietrich Hesse
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08:30 |
SYFS 4.2 |
Asymmetric ferroelectric polarization loops and offset in Pt-ZnO-BaTiO3-Pt thin film capacitor structures — •Nurdin Ashkenov, Mathias Schubert, Evgeni Twerdowski, Nirav Barapatre, Holger v. Wenckstern, Holger Hochmuth, Michael Lorenz, Wolfgang Grill, and Marius Grundmann
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08:30 |
SYFS 4.3 |
Charakterisierung der elektrischen Eigenschaften von Chalkogeniden als Datenspeicher — •Hajo Noerenberg, Ralf Detemple und Matthias Wuttig
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08:30 |
SYFS 4.4 |
CMOS-compatible multi-dot floating-gate non-volatile memory fabrication by ion beam processing — •K.-H. Heinig, B. Schmidt, T. Müller, C. Bonafos, A. Claverie, K.-H. Stegemann, E. Votintseva, P. Normand, P. Dimitrakis, E. Kapetanakis, M. Perego, M. Fanciulli, and V. V.Soncini
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08:30 |
SYFS 4.5 |
Ion irradiation through SiO2-Si interfaces: TEM study of self-organized Si nanocrystals applicable in nonvolatile memories — •Lars Röntzsch, Karl-Heinz Heinig, and Bernd Schmidt
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08:30 |
SYFS 4.6 |
Resistive switching in ferroelectric materials — •Hermann Kohlstedt, Adrian Petraru, René Meyer, Nicholas Pertsev, Ulrich Poppe, and Rainer Waser
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08:30 |
SYFS 4.7 |
Ferroelectric nanostructure arrays grown by PLD using metal nanotube membranes as deposition masks — •Sung Kyun Lee, Woo Lee, Marin Alexe, Kornelius Nielsch, and Dietrich Hesse
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08:30 |
SYFS 4.8 |
Electrical behavior of size-controlled Si nanocrystals arranged as single layer — •Tiezheng Lu, Jun Shen, Marin Alexe, Roland Scholz, and Margit Zacharias
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08:30 |
SYFS 4.9 |
Non-linear imprint behavior of ferroelectric PZT thin films — •P.J. Schorn, U. Böttger, and R. Waser
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