Berlin 2005 – scientific programme

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SYOO: Organic Optoelectronics and Photonics

SYOO 6: Poster

SYOO 6.25: Poster

Monday, March 7, 2005, 18:00–20:00, Poster TU A

Improved Low-Cost Fabrication of Submicron Polymer Field-Effect Transistors — •Susanne Scheinert¹, Gernot Paasch², Ingo Hörselmann¹, and Andrei Herasimovich¹ — ¹TU Ilmenau — ²IFW Dresden

The novel low-cost technology [1] for short-channel transistors results in devices with low mobility and a nonlinear increase of the drain current at low drain voltages. Furthermore, an inorganic insulator is used to impede short-channel effects. We report technological investigations aimed to improve the device characteristics. A possibility to increase the mobility is the HMDS treatment of the silicon dioxide interface. We applied this process to a pure oxide layer and an oxide with prepared source/drain contacts. The increase of the mobility was only obtained operating the process on the pure oxide layer. Two-dimensional simulations have shown that the composite contact made from Cr/Au is the reason for the nonlinear drain current increase. Indeed, subsequently prepared devices with Au contacts only do not show this peculiarity. Different organic materials have been investigated as an alternative for the gate insulator. Layers with high break-through voltages at thicknesses down to 100nm have been achieved already, but for short-channel transistors 50nm or less are needed.

[1] S. Scheinert, T. Doll, A. Scherer, G. Paasch, I. Hörselmann, Appl. Phys. Lett. 84 (2004) 4427-4429.