Berlin 2005 – scientific programme

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SYOO: Organic Optoelectronics and Photonics

SYOO 6: Poster

SYOO 6.30: Poster

Monday, March 7, 2005, 18:00–20:00, Poster TU A

Organic Field Effect Transistors with polymer high-k dielectric insulator — •Klaus Müller, Ioanna Paloumpa, Karsten Henkel, and Dieter Schmeisser — Brandenburgische Technische Uni. Cottbus, Angewandte Physik-Sensorik, 03013 Cottbus, P.O.Box 101344, Germany

Organic field effect transistors consisting of the copolymer poly(vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) and P3HT (poly(3-hexlythiophene)) as active layer have been fabricated. The influence of P(VDF-TrFE) on the transconductance of organic field effect transistors was investigated and enhanced gate effects are observed compared to similar transistors with PMMA (Polymethylmetacrylate) as gate dielectric. Due to the high dielectric constant of P(VDF-TrFE) (DK=12) an operation voltage smaller than for a conventional organic dielectric like PMMA (DK=3.3) was observed. The thickness of the spincoated dielectric layers is in the range of 2microns and in consequence, no significant hysteresis was found, a prerequisite for transistor operation.