Berlin 2005 – scientific programme

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SYOO: Organic Optoelectronics and Photonics

SYOO 6: Poster

SYOO 6.37: Poster

Monday, March 7, 2005, 18:00–20:00, Poster TU A

Organic Field-Effect Transistor as a Bistable Memory Element — •Birendra Singh¹, Nenad Marjanovic¹, Gebhard Matt¹, Niyazi Serdar Sariciftci¹, Reinhard Schwodiauer², and Sigfried Bauer² — ¹Linz Institute for Organic Solar Cells (LIOS), Physikalische Chemie, Johannes Kepler Universität Linz, Austria — ²Soft Matter Physics, Johannes Kepler University Linz, Austria

Most of the organic field effect transistors (OFET) fabricated using organic dielectric exhibit an inherent small hysteresis mostly due to the charge trapping mechanism at the semiconductor/dielectric interface. Devices with a (polyvinyl alcohol), PVA, electret as gate dielectric show a very large, meta-stable hysteresis in its transfer characteristics. The observed hysteresis is found to be temperature dependent. We demonstrate a memory unit of write/read/erase/read cycles with write/erase pulses using positive and negative gate voltages, respectively. All devices have been fabricated using solution processable materials and can be used in large scale printing technologies.