Berlin 2005 – scientific programme

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SYOO: Organic Optoelectronics and Photonics

SYOO 6: Poster

SYOO 6.45: Poster

Monday, March 7, 2005, 18:00–20:00, Poster TU A

Charge carrier mobility in Diindenoperylene (DIP) single crystals — •A. K. Tripathi and J. Pflaum — 3. Phys. Inst., Universität Stuttgart, Germany

Realization of the electron field effect in the single crystal OFETs is limited by the oxidation of the crystal surface. We have experimentally verified sensitivity of organic crystals like tetracene and pentacene towards oxidation. Therefore we need a material that is stable against the oxidation. Diindenoperylene (DIP), because of its chemical properties, is very stable and hence a promising candidate for the transistor applications. For the first time, we have successfully grown single crystals of DIP by the sublimation growth method. Electrical characterization of these single crystals along the c′-direction was done using time-of-flight (TOF) and space-charge-limited-current (SCLC) techniques. Estimation of the electron mobility by the TOF method gives a value close to 0,02 cm²/Vs at room temperature. First estimation of the lower limit of hole mobility could be made by SCLC method, giving a relatively lower value. We shall discuss these results on the background of DIP thin film FETs [1].

[1] N. Karl, Synth. Metals, 133 (2003) 649